- Researchers have developed a two-dimensional heterostructure device using quantum materials. - By applying a voltage to the device, the spin information of electrons can be controlled at ultra-low power. - The device consists of a two-dimensional ferromagnetic material and a two-dimensional ferroelectric material stacked on top of each other. - The voltage-induced lattice expansion in the ferroelectric material changes the magnetic properties of the adjacent ferromagnet, reducing the coercivity required to reorient the spin. - This technology has the potential to be used in ultra-low-power spin memory devices based on quantum materials.